Abstract Founding new materials and structures for solar cells is a challenge in the photovoltaic field. This work evaluated the effect of the lignin in the photovoltaic activity by compounding with TiO2/lignin as photoanode for the dye sensitized solar cells (DSSC’s). Hybrid films (TiO2/lignin) with different concentrations of lignin (5, 10 and 15%) were deposited by spin coating over commercial TiO2 thin films. The cells were sandwich assembled. The characterizations were done through analysis of absorbance, band gap, x-ray diffraction, morphological and electrical. The lignin at 15% reduced the TiO2 band gap from 3.66 to 2.84 eV, favoring the short current density to 11.06 mA/cm2 and efficiency of 4.65%, an increase of 103.95% compared to the TiO2 structure without lignin.

RESUMO Filmes de estanho/óxido de zinco foram depositados em óxido condutor transparente por banho químico, a porcentagens de 5, 10 e 15% de estanho (Sn) na estrutura de óxido de zinco (ZnO). Todos os filmes foram tratados termicamente para melhorar sua cristanilidade. Os filmes produzidos foram caracterizados por difração de raios x e medidas ópticas, como absorbância, transmitância e reflectância. O espectro de raios x mostrou a formação de ZnO na forma de wurtzite e os tamanhos dos cristalitos foram de 53,74; 79,59 e 66,38 nm para os fotoanodos a 5, 10 e 15% de estanho (Sn), respectivamente, na estrutura do óxido de zinco. Os valores calculados para a energia de banda proibida dos filmes revelaram que a presença de estanho pode reduzir o valor da energia até aproximadamente 3,2 eV. Esses filmes foram usados como fotoanodos em células solares sensibilizadas por corante (CSSC) para observar os efeitos do estanho (Sn) na atividade fotovoltaica do semicondutor de óxido de zinco (ZnO). Parâmetros como eficiência e densidade de corrente de curto- circuito foram particularmente afetados pela presença de estanho na composição, com o filme de ZnO a 5% de Sn apresentando os melhores resultados de 7,56% de eficiência e 34,35 mA/cm2 de densidade de corrente de curto-circuito, os demais filmes apresentaram menores valores para a eficiência, o que pode ser atribuído aos menores valores alcançados para a corrente de curto circuito.

ABSTRACT Tin Zinc Oxide thin films were deposited on transparent conductive oxide by chemical bath, at percentages of 5, 10 and 15% of tin (Sn) on the zinc oxide (ZnO) structure. All films were thermally treated to improve its crystallinity. The produced films with tin were characterized by x-ray diffraction and optical measurements, such as absorbance, transmittance and reflectance. The x-ray spectrum showed the formation of the ZnO wurtzite and the crystallite size of the films were calculated to be 53.74; 79.59 and 66.38 nm for the photoanodes at 5, 10 and 15% of tin (Sn), respectively, on the zinc oxide structure. The calculated band gap energy of the films revealed that the presence of tin can reduce the band gap energy to about 3.2 eV. Those films were used as photoanodes on dye sensitized solar cells (DSSC) to observe the effects of the tin (Sn) on the photovoltaic activity of the zinc oxide (ZnO) semiconductor. Parameters such as efficiency and short circuit current density were particularly affected by the presence of tin in the composition, with the 5% Sn ZnO film presenting the best results of 7.56 % efficiency and 34.35 mA/cm2, short circuit current density, the other films presented lower values for efficiency, which can be attributed to lower values of short-current density.

Abstract A low cost spin coater was constructed in this work for the deposition of thin films of titanium dioxide (TiO2) on conductive substrate of FTO (fluoride doped tin oxide) with application on dye sensitized solar cells. The results showed a 95% precision between the speed values obtained by the software of C#sharp language and the spin values observed directly on the device. The TiO2 films deposited through the spin coater with different angular speeds were characterized by UV-Vis optical spectrum, scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrical measurements on an active area of 0.25 cm2. The DSSCs assembled with the TiO2 films of double layer deposited by the spin coater had an efficiency value of 12.74%, while the cell with a single layer presented 4.05% efficiency. Therefore, it is concluded that the spin coater assembled in this study at low costs successfully can produce TiO2 electrodes for DSSCs.

Amongst the many parts of a silicon cells photovoltaic module, silicon is the most important and expensive constituent. Thus, research on silicon recycling from damaged cells can lead to economic and environmental benefits. In this work, the broken silicon cells were tailored to function along with the fluorine-doped tin oxide as the transparent electric conductors. The broken silicon cells were analyzed by the current density versus voltage plots, together with the Mott-Schottky, X-rays diffraction and fluorescence analysis. Under light, the damaged cells sandwiched between the two transparent electric conductors presented photovoltaic effect. However, such effect was not obtained after the removal of the antireflection layer due to the destruction of the n-type layer as demonstrated by the Mott-Schottky analysis. The X-rays diffraction revealed samples rich on silicon atoms and the presence of aluminum atoms as impurity.