Superhydrophobic surfaces of conventional Ti-6Al-4V (TC4) titanium alloys facilitate drag reduction and anti-wear. However, the economical fabrication of a wear-resistant superhydrophobic Ti-10V-2Fe-3Al (TB6) titanium alloy for application in modern aerospace equipment remains to be achieved. Here, an efficient wear-resistant superhydrophobic TB6 titanium alloy surface using commercially available materials and processing equipment was fabricated through nanosecond laser texturing and facile chemical modification. The wettability of textured surfaces, including line and grid patterns, ablated at different laser scanning intervals were investigated and analyzed in terms of surface morphology and chemical composition. Moreover, the mechanisms of coefficient of friction changes on different surfaces under dry and water sliding conditions were studied based on surface morphology and wettability. Under dry sliding and water lubrication conditions, the average coefficient of friction of the prepared superhydrophobic surface can be reduced by 29% and 74%, respectively, compared with that of the original hydrophilic surface.

En este trabajo se evalúan cuatro procedimientos de extracción de parámetros que logran separar los efectos de la resistencia en serie de drenador-surtidor, R, y del factor de degradación de movilidad, θ, a partir de mediciones I D(V G,V D) de transistores MOSFET operando en la región de triodo bajo inversión fuerte. Los métodos se basan en ajustar ecuaciones a mediciones bidimensionales I D(V G, V D) usando algoritmos en modos directo e indirecto. Además de R y θ, estos procedimientos extraen el parámetro de conducción, K, y el del efecto de carga de cuerpo, α. Todos los procedimientos son aplicados a datos experimentales y simulados para varios largos de canal. Los resultados son comparados en términos de eficiencia computacional y de su significado físico.

Four MOSFET parameter extraction methods are evaluated and scrutinized. These methods, which are able to separate the effects of drain-to-source series resistance and mobility degradation factor, are based on direct and indirect fitting of the bidimensional measurements I D(V G,V D) of MOSFETs under strong inversion condition. The procedures also extract the conduction parameter, K, and the bulk charge effect parameters, α. The methods are tested with measured and simulated data for various channel lengths. The comparison is made in terms of computational efficiency and physical meaning.