The concept of carbon nanotube interlayer was successfully introduced to carbon fiber/epoxy composites. This new hybrid laminated composites was characterized by Raman spectroscopy, X-ray diffraction, scanning electron microscopy and tensile tests. An increase on peak stress close to 85% was witnessed when CNTs interlayer with 206.30 mg was placed to carbon fiber/epoxy laminates. The failure mechanisms are associated to CNTs distribution between and around carbon fibers. These CNTs are also responsible for crack bridging formation and the increase on peak stress. Initial stiffness is strongly affected by the CNT interlayer, however, changes on stiffness is associated to changes on nano/micro-structure due to damage. Three different behaviors can be described, i.e. for interlayers with ≈ 60 mg of CNT the failure mode is based on cracks between and around carbon fibers, while for interlayers with CNT contents between 136 mg and 185 mg cracks were spotted on fibers and inside the CNT/matrix mix. Finally, the third failure mechanism is based on carbon fiber breakage, as a strong interface between CNT/matrix mix and carbon fibers is observed.

The absorption edge and the bandgap transition of sol-gel-dip-coating SnO2 thin films, deposited on quartz substrates, are evaluated from optical absorption data and temperature dependent photoconductivity spectra. Structural properties of these films help the interpretation of bandgap transition nature, since the obtained nanosized dimensions of crystallites are determinant on dominant growth direction and, thus, absorption energy. Electronic properties of the bulk and (110) and (101) surfaces are also presented, calculated by means of density functional theory applied to periodic calculations at B3LYP hybrid functional level. Experimentally obtained absorption edge is compared to the calculated energy band diagrams of bulk and (110) and (101) surfaces. The overall calculated electronic properties in conjunction with structural and electro-optical experimental data suggest that the nature of the bandgap transition is related to a combined effect of bulk and (101) surface, which presents direct bandgap transition.

Transparent electrically conducting antimony-doped SnO2 thin films have been prepared by sol-gel dip-coating process from colloidal aqueous suspension. The effect of doping content on the structural, optical and electrical properties is analyzed. Results from infrared optical transmission and reflection have shown that the higher the Sb concentration the lower the transmission intensity and the higher the reflection signal. Absorption intensity increases as well. Results of X-ray reflectometry and electron microscopy have shown that the density of films fired at 400 °C after each dip is higher than that of multi-dipped films prepared with a single annealing. Both the electrical characteristics in the dark and the increase in conductivity as function of illumination through different filters, at 190 K, evidence that the transport properties of these films are dominated by the presence of defects, including the trapping at grain boundary due to excess of oxygen.

Er-doped SnO2 thin films and xerogels are obtained by sol-gel technique. In order to understand the Er³+ rare-earth ion activity in SnO2 matrix, a characterization of Er incorporation is done through emission and excitation spectra of xerogels, besides thin film electrical characterization. Effects to grain dimensions are also analyzed based on X-ray diffraction data showing the particle growth with annealing temperature and inhibition of this growth by Er doping. Electrical characterization results suggest that Er³+ has an acceptor-like character in SnO2, and that codoping with Yb³+ allows an energy transfer process Yb³+ -> Er³+.