In this study, the hybrid corona-dielectric barrier discharge plasma treatment was employed to modify the physical, chemical and morphological characteristics of a half-knitted fabric composed of 92% polyamide 6.6 and 8% elastane (PA). These properties of the fabric were evaluated by the water contact angle, x-ray diffraction, infrared spectroscopy, scanning electron microscopy and atomic force microscopy techniques. In addition, the dyeing and washing processes were also investigated. A significant reduction of the contact angle was observed for plasma-treated PA. Infrared spectroscopy analyses indicated that C-H, N-H, and N-O groups in PA increased after plasma treatment, explaining the improved coloring strength for the plasma-treated samples when dyed with reactive and acid dyes. A better fixation of dye was also observed after the atmospheric plasma treatment. Furthermore, dyeing with a basic and acid dye caused the dyeability increases for the plasma-treated sample compared with the untreated sample.

Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 °C. The crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. The optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. In addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of - 1610 ppm/K up to 250 °C.

Abstract: Recognizing the need to consolidate the research and development (R&D) activities in microelectronics fields in a strategic manner, the Plasma Processes Laboratory of the Technological Institute of Aeronautics (LPP-ITA) has established a technology roadmap to serve as a guide for activities related to development of sensors based on silicon carbide (SiC) thin films. These sensors have also potential interest to the aerospace field due to their ability to operate in harsh environment such as high temperatures and intense radiation. In the present paper, this roadmap is described and presented in four main sections: i) introduction, ii) what we have already done in the past, iii) what we are doing in this moment, and iv) our targets up to 2015. The critical technological issues were evaluated for different categories: SiC deposition techniques, SiC processing techniques for sensors fabrication and sensors characterization. This roadmap also presents a shared vision of how R&D activities in microelectronics should develop over the next five years in our laboratory.