Abstract: In this work the research activities on nanosciences and nanotechnology at the Advanced Materials Department of the Potosino Institute of Scientific and Technology Research (IPICyT) are presented. Specifically, the scientific equipment and research grants that allow the nanoestructures and nanoestructured materials studies and characterization, performed by academics at two of the national laboratories in IPICyT.

Resumen: En este trabajo se describen las actividades en nanociencias y nanotecnologías (NyN) que se llevan a cabo en la División de Materiales Avanzados del Instituto Potosino de Investigación Científica y Tecnológica A.C. (IPICyT). En particular, se describen los laboratorios nacionales con los que cuentan los académicos para desarrollar sus investigaciones en estas áreas. Asimismo, se dan a conocer los proyectos de investigación que han sido apoyados con financiamiento externo. Por otro lado, se da cuenta de algunos de los equipos científicos y sus bondades para permitir caracterizar y estudiar las nanoestructuras y materiales nanoestructurados.

The recrystallization of a cold-worked shape memory alloy (SMA) without R-phase transition, i.e. the Ti-45.0Ni-5.0Cu (% at.), has been studied by thermoelectric power (TEP) technique and electrical resistivity change (Dρ) on several heat treated samples after cold working. This study was also supported by differential scanning calorimetry (DSC), transmission electron microscopy (TEM) and hardness Vickers (HV) measurements. Transformation temperatures show an increase with heat treatment temperature, while hysteresis decreases. Hardness values decrease with aging temperature for the same heat treatment time. No important changes were observed in electrical resistivity with heat treatment temperature, except at 300ºC. TEP results show an important increase with heat treatment temperature, and a linear relationship was found between hardness and thermoelectric power. With this correlation between TEP and microhardness it is possible to predict its mechanical response by knowing its TEP, so this correlation could be important for applications.

Chemical Vapor Deposition (CVD) is a technique which has been used successfully for obtaining thin copper metallic films. Additionally, through prior treatment of the substrate, selective deposits can be carried out, that is, coating only the predetermined regions of the substrate. In this work we present the results of the in situ production of seeds made from some metals used successfully in the selective deposition of Cu on silicon wafers.

La deposición química de vapor (CVD) es una técnica que se ha utilizado con éxito para obtener películas metálicas delgadas de cobre. Adicionalmente, mediante el tratamiento previo del substrato se puede depositar selectivamente, esto es, recubrir sólo aquellas regiones predeterminadas del substrato. En este trabajo se presentan los resultados de la producción in situ de semillas de algunos metales empleados con éxito en el depósito selectivo de Cu sobre obleas de silicio.