In this work, thin films based on the Ti-Zr system were studied, deposited on a silicon substrate by the magnetron sputtering technique using simultaneously a combination of High-Power Impulse Magnetron Sputtering (HiPIMS) and Direct Current Magnetron Sputtering (DCMS) sources. The objective of this work is analyzing the effect of varying HiPIMS frequency (300 Hz, 400 Hz, 500 Hz, and 600 Hz) on the characteristics and properties of the thin films. The thickness increased between 300 Hz and 500 Hz, where the thickness measured 563 nm and 732 nm, respectively; then it decreased to 709 nm at 600 Hz. Hardness and elastic moduli also tended to decrease with increasing frequency, and the results for the first property were between 7 GPa and 10.3 Gpa, while the elastic moduli were from 114 Gpa to 157 Gpa, in which lower values were reached at higher frequencies. In the wettability test, lower contact angles were observed for samples with lower frequencies due to their high surface energy, providing better hydrophilic properties. TiZr Ti Zr studied HighPower High Power (HiPIMS DCMS (DCMS sources (30 40 50 60 30 56 73 respectively 70 103 10 3 10. 11 15 test energy (3 4 5 6 1 (

This work reports on the properties of GaN films grown by reactive magnetron sputtering onto glass substrate kept at relatively low temperature (400°C), using different RF power applied to the Ga target. Their structural, morphological, vibrational and optical properties were characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and UV-vis spectrophotometry. The films have wurtzite phase with strong preferential orientation in the c-axis direction. Moreover, two clear contributions to the (0002) diffraction peak could be found, indicating the presence of two different morphologies, which were discussed in terms of the formation of an intermediate layer between the substrate and a dominating columnar-like microstructured film. 400°C, 400C C 400°C , 400 (400°C) target structural morphological Xray X ray microscopies UVvis UV vis spectrophotometry caxis c axis direction Moreover 0002 (0002 found morphologies columnarlike columnar like film 40 (400°C 000 (000 4 00 (00 0 (0 (

The present paper sets out to investigate the role of voltage pulse length on the properties of Nb:TiO2 films deposited by High Power Impulse Magnetron Sputtering (HiPIMS). Several characteristics of the films were investigated, namely, resistivity, transmittance, crystallinity and band gap values of Nb:TiO2 films. Reactive depositions were carried out in Ar/O2 plasma with 40 µs, 50 µs, 60 µs, and 70 µs pulses. Increasing the pulse length changes the deposition from compound to metal mode. As it gets closer to metal mode, the deposition rate increases by up to one order of magnitude, while the resistivity of the resulting Nb:TiO2 film becomes as low as 10-4 Ω.cm, without any significant loss in optical transmittance, which remains close to 90% for a wavelength around 450 nm, but reduction in 25% of heat transmission (above 800 nm) were observed. Results indicate the anatase phase for all deposition conditions, and Ti3+ states increase with the pulse length, which can be explained by the generation of a second band gap. Both the niobium doping and the Ti3+ states can contribute to increase the conductivity of the Nb:TiO2 films in the as-deposited condition. NbTiO2 NbTiO Nb TiO2 TiO Nb:TiO HiPIMS. HiPIMS . (HiPIMS) investigated namely transmittance ArO2 ArO Ar O2 O Ar/O 4 5 6 7 pulses mode magnitude 104 10 10- Ωcm Ω cm Ω.cm 90 45 nm 25 above 80 observed conditions Ti3 Ti asdeposited condition (HiPIMS 1 9 2 8

Abstract This work reports the properties of GaN films grown onto c-Si (100) at relatively low substrate temperature (400°C) by reactive magnetron sputtering. The study depicts the effect of working pressure and RF power on the GaN film structural, vibrational and optical properties characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and spectroscopic ellipsometry. Unusual low pressure deposition condition (0.40 Pa) was achieved by using a separated argon inlet directed to the Ga target surface, resulting in improved crystalline quality of the films. In this condition, the preferential crystalline orientation, the surface morphology and the optical gap of the GaN films show a strong dependence on the RF power applied to the Ga target, where low RF power (30-60 W) was responsible for increasing the c-axis orientation and the optical gap, while higher RF power (75-90 W) decreased the overall crystal quality and increased the surface roughness.

Every year, billions of dollars are invested in research and development for space applications, including new systems, new technologies, and new materials. DLC (Diamond-Like Carbon) is a promising material for use in these applications, but its use faces a technological barrier, since it is severely etched by atomic oxygen and ozone. In this study, SiOx-DLC thin films were deposited as a top layer of diamond-like carbon (DLC) films on Ti-6Al-4V substrates to increase resistance against corrosion by atomic oxygen and ozone as well as meet the requirements for use in Low Earth Orbit (LEO) satellites. The corrosion resistance of the films was evaluated using oxygen plasma, and the tribological and mechanical properties were investigated. The SiOx-DLC top layer reduced the corrosion rate two orders of magnitude and increased the critical load from 16.2 ± 1.5 N to 18.4 ± 0.4 N.

Abstract This paper compares the creep behavior of Ti-6Al-4V alloy after different surface treatments, the plasma nitriding using Plasma Enhanced Chemical Vapor Deposition (PECVD), and the deposition of SiC thin films with Cr interlayer using High Power Impulse Magnetron Sputtering (HiPIMS). A microstructural characterization was performed with Scanning Electron Microscopy (SEM), Scanning and Transmission Electron Microscopy (STEM), and Energy Dispersive Spectroscopy (EDS) techniques. The creep test was performed at a constant load from 500 to 600 °C and 125 to 319 MPa, and a fractographic analysis was performed. The EDS analysis of the plasma nitrided layer indicated the nitrogen presence of the compounds TiN and Ti2N and an increase in the iron concentration. Creep test results in both conditions indicated an increase in the creep resistance. Plasma nitrided condition indicated the lowest creep rate and lesser elongation, making it the most suitable in applications that require a low dimensional distortion.

Abstract This work reports how the solar conversion efficiency of dye-sensitized solar cells (DSSCs) depends on the crystalline structure of both the compact TiO2 blocking layer (BL) and homoepitaxially grown porous TiO2 mesoporous structure. The films were grown by simultaneous sputtering of titanium targets by DC magnetron and by high-power impulse magnetron systems (HiPIMS). The deposition conditions were managed to produce in situ dense BLs and porous TiO2 films. The only variable was the polarization of the BLs (0 to -200V). The polarization caused phase transformations from pure anatase phase through rutile-anatase mixed phases to rutile phase. The polarization results in decreasing intensity of the anatase (101) peak of the porous layers. The latter promptly decreased linearly the value of the short-current Isc and exponentially the open-circuit voltage Voc of the cells. Another inference is the surface energy of the BLs, which follows an exponential decay as a function of the film polarization. XPS study of the Ti 2p3/2 – Ti 2p1/2 doublet reveals an appearance of a shake-up satellite, whose area exponentially decreases as the polarization potential rises. This phenomenon is discussed and related with other physical aspects of the homo-epitaxially grown films with different texture. The anatase phase content and its purity predefined by the experimental conditions determine the quality of the DSSC, as well as other components such as the dye type, the electrolyte, and the electrode materials.

Este artigo discute o emprego do carbeto de silício (SiC), na forma de substrato e filme fino, em sensores MEMS (Micro-Electro-Mechanical Systems) para aplicações em ambientes sujeitos a condições extremas, especialmente no setor aeroespacial. As propriedades físicas e químicas do SiC que o tornam um material adequado para dispositivos eletrônicos e sensores são descritas. Os conceitos, evolução e aplicações da tecnologia MEMS são apresentados. Uma visão geral sobre o estágio atual de desenvolvimento de sensores MEMS baseados em SiC e uma análise das pesquisas realizadas nesta área no exterior e no Brasil, tanto nas universidades quanto nas indústrias, são também apresentadas. Os recentes avanços alcançados, as dificuldades encontradas e o impacto dessas pesquisas são discutidos, bem como as perspectivas para um futuro próximo.

This paper discusses the use of silicon carbide (SiC), in bulk and thin-film form, in MEMS (Micro-Electro-Mechanical Systems) sensors for extreme environment applications, especially in aerospace. The physical and chemical properties of SiC that make it a suitable material for electronic devices and sensors are described. Concepts, developments and applications of MEMS technology are presented. An overview of the current stage of development of SiC-based MEMS sensors and an analysis of research conducted in this area in Brazil and abroad, both in universities and industries are also presented. The recent progress made, difficulties encountered and the impact of these investigations are discussed as well as the outlook for the near future.

In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.

The electrical breakdown has been investigated for low-pressure argon and nitrogen discharges under the influence of an external longitudinal magnetic field. Plane-parallel aluminum electrodes (5 cm diameter) separated by a variable distance d (4.0 cm < d < 11.0 cm) were sustained with a dc voltage (0 < V < 1 kV). A Helmholtz coil was used to produce an uniform magnetic field(B) parallel to the discharge axis. Paschen curves were obtained and the secondary electron emission coefficient (gamma), the first Townsend ionization coefficient (alpha) and the ionization efficiency(eta), were plotted with respect to the variation of the reduced field (E/P). To observe the effect of the magnetic field these curves were plotted for fixed values of B=0 and B=350 Gauss. As consequence of the longitudinal magnetic field, the free paths of the electrons in the Townsend discharge are lengthened and their lateral diffusion is reduced, thus reducing electron losses to the walls. The data presented in this paper give a quantitative description of the B-field effect on the Townsend's coefficients and overall it is concluded that the DC electrical breakdown of the gases is facilitated if a longitudinal magnetic field is applied along the discharge axis.