Titanium oxide (TiO2) thin films were obtained using the MOCVD method. In this report we discuss the properties of a film, produced using a ordinary deposition apparatus, as a function of the deposition time, with constant deposition temperature (90 °C), oxygen flow (7,0 L/min) and substrate temperature (400 °C). The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and visible and ultra-violet region spectroscopy (UV-Vis). The films deposited on Si (100) substrates showed the anatase polycrystalline phase, while the films grown on glass substrates showed no crystallinity. Film thickness increased with deposition time as expected, while the transmittance varied from 72 to 91% and the refractive index remained close to 2.6.

The modified polymeric precursor method was used to synthesize ferroelectric bismuth-layered compounds such as, SrBi2Ta2O9 (SBT) and SrBi2Nb2O9 (SBN). This method allows for the use of precursor reagents such as oxide, carbonate or nitrate as cation sources, with the additional advantage of not requiring special equipment for the synthesis. The films were deposited by spin coating on Pt/Ti/SiO2/Si(100) and SrTiO3(100) (STO) substrates and crystallized at temperatures between 700 and 800 °C in the case of SBT films and 650 °C to 750 °C in that of SBN films. The crystallographic and microstructural characterizations were carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The ferroelectric and dielectric properties of the films indicate their applicability in ferroelectric memories and optical devices.

Lead lanthanum zirconate titanate [PLZT (9/65/35)] thin films were prepared by dip-coating on Si (100) or Si/Ti/Pt (100) substrates using a polymeric precursor solution and annealed at 650 °C for 3 h. Perovskite phase formation of the PLZT thin films and microstructure were analysed using XRD and SEM. Effects of Si (100), Si/Ti/Pt (100) substrates and atmosphere on crystallization of PLZT thin films were studied. Films deposited on platinum coated silicon (100) show a heterogeneous surface with presence of bubbles. Otherwise, the PLZT (9/65/35) thin films deposited on silicon (100) substrate shows a more uniform surface after annealing in oxygen atmosphere.

Columbite route for synthesis of P3MgNb2O9 (PMN) allows the suppression of secondary phases in PMN powders. These phases, having low dielectric constant, affect negatively the dielectric properties of PMN ceramics. Aiming to get reactive PMN powders, the partial oxalate method was used to precipitate lead oxalate over MgNb2O6 particles. The columbite (NM) powders were prepared using polymeric precursor based on Pechini's method. Two processing routes were used to prepare PMN powders. In the first one the NM-lead oxalate co-precipitate was washed in water and ethanol and calcined at several temperatures. In the second route, the NM-lead oxalate co-precipitate was washed in water and isopropyl alcohol, ball milled for 30 min and calcined at several temperatures. The second route leads to practically pyrochlore free PMN. Powders morphologies observed by SEM showed the formation of agglomerates, which sizes depend on the processing route.