AgI thin films were grown on amorphous commercial glass substrates with chemical bath deposition (CBD) at different pH values (2, 3, 4, 5, 6), 6 hours deposition time and 60 °C. The structure of the nanocrystals was characterized by X-ray diffraction (XRD). The ratio of Ag+ and I- ions changed the crystalline structures. The presence of the Ag+ ions produces the γ-phase of AgI and excess of iodine concentration produces β-phase of AgI. The pH: 4 was like a transition pH for these phases. The number of crystallites per unit area has maximum value at pH: 5, as the structure is re-crystallization to hexagonal phase. Also, the thicknesses of produced thin films were decreased with increased pH values. Therefore, transmission, reflection, extinction coefficients and refractive index of the materials were affected by thicknesses, and calculated to be 32, 35, 3, 11, 9 (%) - 27, 25, 61, 45, 49 (%) - 0.036, 0.032, 0.067, 0.107, 0.075 and 3.21, 3.02, 5.16, 8.35, 5.70 in 550 nm at pH: 2-3-4-5-6 values, respectively. The exciton peaks of AgI were observed at between 320 and 420 nm. Surface properties were investigated by using scanning electron microscopy (SEM).

This study investigates the production of cerium sulfide (CeSx) amorphous thin films on substrates (commercial glass) by chemical bath deposition at different pH levels. The transmittance, absorption, optical band gap and refractive index of the films are measured by UV/VIS Spectrum. According to XRD analysis, the films show amorphous structure in the baths with pH: 1 to 5. It has been observed that the optical and structural properties of the films depend on pH value of the bath. The optical band gap (2.08 eV to 3.16 eV) of the films changes with the film thickness (23 nm to 1144 nm). We show that the refractive index has a positive relationship with the film thickness, where the values of 1.93, 1.45, 1.42, 2.60 and 1.39 are obtained for the former, and 34, 560, 509, 23 and 1144 nm (at 550 nm wavelength) for the latter. We compare the optical properties of amorphous and crystal form of CeSx thin films. We show that the optical band gaps of the amorphous CeSx are lower than that of crystal CeSx.

Manganese selenite (MnSeO4) crystalline thin film has been produced with chemical bath deposition on substrates (commercial glass). Properties of the thin film, such as transmittance, absorption, and optical band gap and refraction index have been investigated via UV/VIS Spectrum. The structural properties of orthorhombic form have been observed in XRD. The structural and optical properties of MnSeO4 thin films, deposited at different pH levels were analyzed. Some properties of the films have been changed with the change of pH level, which has been deeply investigated. The grain size of MnSeO4 thin film has reached its highest value at pH 9. The refraction index and extinction coefficient of MnSeO4 thin films were measured to be 1.53, 2.86, 2.07, 1.53 (refraction index) and 0.005, 0.029, 0.014, 0.005 (extinction coefficient) for grain sizes 21, 13, 26, and 5 nm respectively. The band gaps (Eg) of the films were measured to be 2.06, 2.57, 2.04, and 2.76 eV for the grain sizes mentioned above. The value of dielectric constant at pH 10 was calculated as 1.575.

Abstract CuI crystalline thin films were produced on substrates (commercial glass) using chemical extraction method in different chemical bath media. In this study, their structural, optical and electrical properties were analyzed. Transmittance, absorption, optical band gap and refractive index of the films were examined by UV/VIS spectrum. XRD data showed that the film has a hexagonal structure for CuI. Surface and elemental (in terms of ratio) analysis of the films were performed via SEM and EDX analysis. The highest average grain size of CuI was observed for the film produced in aqueous media whereas the lowest average grain size was seen in chloroform bath. The curve formed by the number of crystallites per unit area (N) is different than the curves of dislocation density and average grain size. Number of crystallites per unit area has reached its maximum value in CCl4 bath, but it has been decreased in chloroform bath. In addition, film thickness has varied between 1232 nm and 3624 nm according to the solvent of bath.