This work presents a two-step procedure to obtain thin films with a combination of CuSbS2 and Cu12Sb4S13 phases for study in thermoelectric applications. The procedure consisted of the physical evaporation of sulfides layers (Sb2S3 and CuS) on glass substrates and the subsequent annealing of the samples in a N2 atmosphere. The characterizations by Raman spectroscopy and XRD revealed that the samples presented a varied percentage of Cu12Sb4S13 and CuSbS2. The results indicated that the percentage of phases depended on the initial thickness of the sulfide layers and the annealing temperature. The lower initial ratio between sulfide thicknesses and annealing temperature above 300 °C favored the formation of Cu12Sb4S13. However, the thermoelectric properties were improved when the phases coexisted in the thin film compared to samples with high percentages of Cu12Sb4S13. In this way, a sample with a power factor of 2.30 μW /cm∙ K2 at 60 ºC was identified.

Abstract Antimony doped tin oxide (ATO) thin films are deposited on corning glass substrate using the spray pyrolysis technique. The experimental parameters such as distance between the substrate and source (10-30 cm), substrate temperature (350-450°C) and atmospheres (Nitrogen and Forming gas) are varied to study their effect on the properties of ATO thin films. The ATO thin film annealed at 425°C exhibits the lowest electrical resistivity of 2.23×10-2 Ω-cm. Besides, the film annealed in the nitrogen atmosphere showed a less resistivity value of 9.06×10-3 (Ω-cm) than the forming gas atmosphere. The film doped with 3 at% of Sb revealed the highest figure of merit value of 11.45x10-2 Ω-1. The preferential orientation is observed at the (200) diffraction plane in all the cases from the structural studies. Furthermore, the intensity of the diffraction planes decreases as the temperature increases. The average transmittance of 75% is obtained for ATO thin films.