The single-phase polycrystalline copper oxide (Cu2O) films were prepared on sapphire substrates by radio frequency (RF) magnetron sputtering technology which was characterized by low cost and high efficiency. The influences of oxygen flow rate on physical characteristics of the prepared films were investigated. The XRD results showed that the single-phase Cu2O film exhibited a (110) preferred orientation through the analysis of texture coefficient. The AFM images exhibited that the prepared Cu2O film had the highest surface roughness with a distinctive quadrangular surface morphology. The optical transmittance of the single-phase Cu2O film was under 35% and the band gap energy was calculated to be 2.30 eV, the absorption spectra included the peak wavelength of solar radiation and the high absorptivity made it to be a suitable absorbing material. The Hall measurement indicated that all the samples exhibited p-type conductivity. The resistivity, mobility and carrier concentration of the single-phase Cu2O film was 4625 Ω·cm, 1.87 cm2/v·s and 7.227×1014 cm−3, respectively.

In this work, we reported the effects of sputtering power on the structure, optical and electrical properties of InN nanodots prepared on Al2O3 substrate by magnetron sputtering.The results showed that the as-grown InN films exhibited uniform nanodot morphology and the size of the InN nano grains increased with the sputtering power was increased. The InN nanodot exhibited highly c-axis prefered orientation with mainly InN (002) diffraction. The optical band gap of InN samples showed an decreasing trend with the increase in sputteirng power. Moreover, the electrical properties of the InN samples were discussed in detail by hall effect and the carrier concentration and mobility could be adjusted from 3.233×1019 to 1.655×1020 cm-3 and 1.151 to 10.101 cm2/v•s, respectively. These results will lay a good fundation for the applicaion of InN material in the field of gas sensers and light emitting diodes.

NiO thin films were deposited on Si and Corning 1737 glass substrates using radio frequency (rf) magnetron sputtering system. The physical properties of NiO films under different sputtering power were thoroughly studied. The XRD results indicated that as-prepared NiO films with the sputtering power above 100 W developed only (200) preferred orientation. The AFM results showed that the NiO films were composed of different-size NiO nano-grains and the grain size increased with increasing the sputtering power. The samples marked A-E under the sputtering power of 80, 100, 120, 140 and 160 W have optical band gap values of 3.70, 3.65, 3.50, 3.45 and 3.44 eV, respectively. Comparatively, the controllable electrical properties of the films could be achieved by the variation of crystal quality arises from the sputtering power.

PURPOSE: To evaluate the preemptive analgesia effects of ketamine for postoperative pain. METHODS: PubMed, EMBASE and Cochrane Library were searched to identify randomized controlled trials (RCTs) involved in ketamine for preemptive analgesic up to March 2013. The relative risk (RR) or mean difference (MD) as well as the confounding 95% confidence interval (CI) were calculated by the Revman 5.0 software. RESULTS: A total of five studies including 266 patients were included in this meta-analysis. Overall, ketamine could reduce the postoperative morphine consumption and significantly prolong the time to first analgesic (p < 0.00001, MD = 0.91, 95% CI: 0.56 to 1.26). However, there was no significant difference in indicators of nausea and vomiting (p = 0.87, RR = 1.04, 95% CI: 0.67 to 1.60), surgical time (p = 0.41, MD = -2.13, 95% CI: -7.21 to 2.95) and anesthetic time (p = 0.53, MD = -1.54, 95% CI: -6.34 to -3.26) between ketamine and control group. CONCLUSIONS: Ketamine was able to accomplish some preemptive analgesic effects of reducing postoperative morphine consumption and prolonging the time to first analgesic. Meanwhile, ketamine was as safe as physiological saline in side effects of nausea and vomiting.